3D thermal analysis of AlGaN/GaN high power ultraviolet light-emitting diodes

We report 3D simulation of AlGaN/GaN high power (λ ~ 350 nm) light emitting diodes (LEDs) for their advance thermal management. Theoretical transit thermal analysis study has been carried out for an efficient heat distribution and dissipation from the junction layer. The designed package was mainly consists of three layers namely, thermal interfacial materials (TIM), specialty designed submount and high conductivity heat-sink. Efficient non-metallic and inter-metallic material layers such as, single layer carbon nano-tubes (CNT), Au₂₀Sn₈₀, and Ag_3.5Sn_96.5 as TIMs, high thermal conductivity AlN, SiC, and diamond (C) as submounts and Al, & Cu as heat-sinks were employed. Finite element analysis was performed to investigate the heat distribution and dissipation profile through junction layer. Calculated data was analyzed using transient temperature profile to find a suitable combination of TIM, sbmount and heat sink for an efficient thermal management of high power UV LEDs. Comparative study showed that CNT, C and Cu were among the best suited choice as TIM, submount and heat-sink. The estimated average temperature of Cu as heat-sink was ~ 60 °C for Au₂₀Sn₈₀, and ~ 50 °C for Ag_3.5Sn_96.5, whereas, the transient temperature profile of CNT was ~ 160 °C respectively.