Title :
An 800 MHz HBT class-E amplifier with 74% PAE at 3.0 volts for GMSK
Author :
Wong, G.K. ; Long, S.I.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A low voltage, high efficiency HBT class-E amplifier has been demonstrated at 800 MHz. Collector efficiency of 78% and PAE of 74% with 13 dB transducer power gain were obtained with a 3.0 V supply. The output power was 21.3 dBm, limited by the device area available in this study. Spectral regrowth meets the normalized GSM mask standards. The efficiency was shown to increase by about 8% through the use of harmonic tuning on the input network.
Keywords :
UHF power amplifiers; bipolar transistor circuits; circuit tuning; heterojunction bipolar transistors; minimum shift keying; transceivers; 13 dB; 3 V; 74 percent; 78 percent; 800 MHz; HBT class-E amplifier; PAE; harmonic tuning; high efficiency; input network; low voltage operation; normalized GSM mask standards; spectral regrowth; Capacitors; Circuits; Coaxial components; Frequency; Gain; Heterojunction bipolar transistors; Impedance; Low voltage; Resonance; Signal design;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803779
