Title :
Accurate modeling and numerical techniques in simulation of impact-ionization effects on BJT characteristics
Author :
Yu, Z. ; Chen, D. ; Goossens, R.J.G. ; Dutton, R.W. ; Vande Voorde, P. ; Oh, S.-Y.
Author_Institution :
Integrated Circuits Lab., Stanford Univ., CA, USA
Abstract :
The inclusion of impact ionization in device simulation often suffers from numerical instability. In the present work, a general technique is demonstrated for applying circuit boundary conditions to achieve numerical stability. This technique has been used in the simulation of BV/sub CEO/ of an advanced silicon bipolar device. An I-V curve was obtained showing a new, previously unreported feature, namely, two distinct regions where snap-back occurs. Measurements on fabricated devices confirmed this phenomenon. A detailed physical explanation for the shape of the I-V curves is provided. The dependence on the width and doping of the epi-layer part of the collector is also analyzed.<>
Keywords :
bipolar transistors; impact ionisation; numerical analysis; semiconductor device models; BJT characteristics; I-V characteristics; bipolar device; breakdown voltage; circuit boundary conditions; epilayer doping; epilayer width; impact-ionization effects; modeling; numerical stability; numerical techniques; simulation; snap-back; Bipolar integrated circuits; Boundary conditions; Breakdown voltage; Circuit simulation; Convergence of numerical methods; Equations; Impact ionization; Numerical models; Numerical simulation; Numerical stability;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235280
