DocumentCode
3302154
Title
Low-noise, high-speed avalanche photodiodes
Author
Campbell, Joe C.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
2001
fDate
25-27 June 2001
Firstpage
9
Lastpage
13
Abstract
Describes materials and structural modifications to the thin multiplication regions that have yielded ultra low multiplication noise. In the low gain regime, these APDs have achieved excess noise factors lower than that of Si APDs. Very high gain-bandwidth products can be achieved by proper design of the multiplication region and the use of a waveguide structure.
Keywords
avalanche photodiodes; impact ionisation; semiconductor device noise; APDs; excess noise factors; gain-bandwidth products; high-speed avalanche photodiodes; low gain regime; multiplication regions; structural modifications; ultra low multiplication noise; waveguide structure; Avalanche photodiodes; Gallium arsenide; Heterojunctions; Impact ionization; Indium gallium arsenide; Indium phosphide; Microelectronics; Noise reduction; Power engineering and energy; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2001
Conference_Location
Notre Dame, IN, USA
Print_ISBN
0-7803-7014-7
Type
conf
DOI
10.1109/DRC.2001.937851
Filename
937851
Link To Document