MEMS hotplates with TiN as a heater material

Author

Creemer, J.F. ; van der Vlist, W. ; de Boer, C.R. ; Zandbergen, H.W. ; Sarro, P.M. ; Briand, D. ; de Rooij, N.F.

Author_Institution

Kavli Inst. of NanoScience-HREM, Delft

fYear

2005

fDate

Oct. 30 2005-Nov. 3 2005

Abstract

Titanium nitride has been investigated as a heater material for hotplates and microreactors. TiN is CMOS compatible, and has a higher melting point (2950 degC) than conventional heaters of Pt and poly-Si. For the first time, TiN is tested inside a conventional membrane of LPCVD SiN_x. Two types of TiN are considered: high stress and low stress. Their performance is compared with that of Pt. The maximum temperature of TiN coils is 11% higher than Pt coils with the same layout and over 700 degC. For high-stress TiN, the TCR is almost constant and close to that of Pt, making it very suitable for temperature sensing. In the case of low-stress TiN the TCR becomes nonlinear and changes sign. The large differences between the nitrides are explained by the grain structure. Low-stress TiN contains many voids. They relax stress but strongly scatter the conduction electrons. The different grain structures are related to the sputtering parameters according to the Thornton model

Keywords

electric heating; micromechanical devices; temperature sensors; titanium compounds; MEMS hotplates; Thornton model; TiN; grain structure; heater material; hotplates material; microreactors; sputtering parameters; temperature sensor; Biomembranes; Coils; Micromechanical devices; Scattering; Silicon compounds; Stress; Temperature sensors; Testing; Tin; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2005 IEEE

Conference_Location

Irvine, CA

Print_ISBN

0-7803-9056-3

Type

conf

DOI

10.1109/ICSENS.2005.1597703

Filename

1597703