Title :
SLPT studies of a MISiC device
Author :
Klingvall, R. ; Eriksson, M. ; Lundström, I.
Author_Institution :
Div. of Appl. Phys., Linkopings Universitet, Linkoping
fDate :
Oct. 30 2005-Nov. 3 2005
Abstract :
We are introducing a modified scanning light pulse technique (SLPT) setup that can be used to evaluate SiC-based gas-sensitive field-effect devices. This is exemplified with measurements on a Pt-MISiC capacitor that has a metal thickness gradient. The device shows large responses to hydrogen and ammonia in air. The measurement setup is using UV transparent optics together with mechanically chopped light from a short wavelength light source. The short wavelength of the light can create electron hole pairs in the depletion region of the wide band gap semiconductor SiC. The spatial resolution of the system is found to be approximately 50 mum, which is sufficient for our measurements
Keywords :
MIS capacitors; MISFET; gas sensors; silicon compounds; wide band gap semiconductors; MISiC device; Pt-SiC; SLPT; UV transparent optics; gas-sensitive field-effect devices; mechanically chopped light; scanning light pulse technique; short wavelength light source; wide band gap semiconductor; Capacitors; Charge carrier processes; Electron optics; Hydrogen; Light sources; Mechanical variables measurement; Optical pulses; Thickness measurement; Wavelength measurement; Wide band gap semiconductors;
Conference_Titel :
Sensors, 2005 IEEE
Conference_Location :
Irvine, CA
Print_ISBN :
0-7803-9056-3
DOI :
10.1109/ICSENS.2005.1597705
