Title :
Fast write time and long retention 1T memory
Author :
Chin, A. ; Yang, M.Y. ; Chen, S.B. ; Sun, C.L. ; Chen, S.Y.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
It is desirable to achieve both fast data access time and long data retention time simultaneously. We have developed a 1T PZT/40 Å-Al/sub 2/O/sub 3/ memory to achieve very fast write (program/erase) time <100 ns, years long data retention, and good endurance >10/sup 10/ P/E cycles. The small 1T size is highly competitive with other memory technologies.
Keywords :
DRAM chips; MOSFET; alumina; dielectric thin films; ferroelectric storage; ferroelectric thin films; lead compounds; silicon; 100 ns; 1T memory; DRAM cell; PZT-Al/sub 2/O/sub 3/; PZT/Al/sub 2/O/sub 3/ dielectric; PbZrO3TiO3-Al2O3; Si; Si substrate; endurance; fast data access time; ferroelectric MOSFET; ferroelectric gate dielectric; long data retention time; one-transistor memory; Annealing; Artificial intelligence; Capacitance-voltage characteristics; Charge transfer; Dielectrics; Ferroelectric materials; Flash memory; MOSFET circuits; Random access memory; Voltage;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937854
