Title :
Optimization of two-dimensional collector doping profiles for submicron BiCMOS technologies
Author :
Taft, R.C. ; Hayden, J.D. ; Gunderson, C.D.
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
The authors demonstrate that the optimal 2-D collector doping profile for BiCMOS technologies is a strong function of the intended circuit application of the BJT (bipolar junction transistor). The 2-D collector doping profile in this study was tailored by selectively implanting the collector (SIC) into only the intrinsic region of the BJT. A controlled comparison between SIC and conventional collector implant devices was made by keeping BV/sub CEO/ and beta invariant. It is concluded that selectively implanting the collector into the intrinsic area is advantageous for low-current, but detrimental for high-current gates.<>
Keywords :
BiCMOS integrated circuits; bipolar transistors; doping profiles; integrated circuit technology; ion implantation; BJT; bipolar junction transistor; high-current gates; low current gates; optimization; selective collector implantation; submicron BiCMOS technologies; two-dimensional collector doping profiles; BiCMOS integrated circuits; Bipolar transistors; Circuit simulation; Doping profiles; Etching; Frequency; Implants; Laboratories; Research and development; Silicon carbide;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235287
