A reverse base current under high level injection and its influence on BiCMOS circuit

Author

Ishimaru, K. ; Matsuoka, F. ; Maeda, T. ; Satake, H. ; Fuse, T. ; Matsui, M. ; Urakawa, Y. ; Momose, H.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

865

Lastpage

868

Abstract

The base pushout induced reverse base current (I/sub RB/) at high level injection was observed and analyzed. A simple model to describe this phenomenon was also proposed. The I/sub RB/ is described universally by this model even if collector conditions are varied. The I/sub RB/ increases with decreasing device temperature and is suppressed by voltage drop at the external base region due to carrier freeze-out. This reverse base current causes failure on the BiCMOS circuit and gives a new limitation for applied power supply voltage.<>

Keywords

BiCMOS integrated circuits; bipolar transistors; integrated circuit technology; semiconductor device models; BiCMOS circuit; I-V characteristics; applied power supply voltage; base pushout induced reverse base current; carrier freeze-out; collector conditions; device temperature; failure; high level injection; model; polysilicon emitter bipolar transistors; reverse base current; voltage drop; BiCMOS integrated circuits; Bipolar transistors; Fuses; Impact ionization; Laboratories; Neodymium; Power supplies; Semiconductor devices; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235288

Filename

235288