DocumentCode :
3302326
Title :
Temperature-dependent large signal modulation and Auger recombination in In/sub 0.4/Ga/sub 0.6/As quantum-dot lasers
Author :
Ghosh, S. ; Bhattacharya, P. ; Stoner, E. ; Jiang, H. ; Nuttinck, S. ; Singh, J. ; Laskar, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear :
2001
fDate :
25-27 June 2001
Firstpage :
39
Lastpage :
40
Abstract :
Reports, to the best of the authors´ knowledge, the first experimental determination of the Auger coefficients in quantum dots. In/sub 0.4/Ga/sub 0.6/As/GaAs self-organized quantum dot separate confinement heterostructure (SCH) lasers were grown by MBE. The active region consists of five coupled quantum dot layers. Single-mode ridge waveguide lasers with ridge widths 3/spl mu/m, 5/spl mu/m, and 8/spl mu/m and length 600/spl mu/m were fabricated by standard photolithographic techniques and cleaving of the facets. The peak lasing wavelength was measured to be 1.06/spl mu/m at room temperature, confirming lasing from ground state transitions. The lowest measured threshold current was 15 mA.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical modulation; photolithography; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; 1.06 micron; 15 mA; 3 to 8 micron; 600 micron; Auger coefficients; Auger recombination; III V semiconductors; In/sub 0.4/Ga/sub 0.6/As-GaAs; MBE; active region; coupled quantum dot layers; facet cleaving; ground state transitions; peak lasing wavelength; photolithographic techniques; quantum-dot lasers; ridge widths; self-organized quantum dot separate confinement heterostructure lasers; single-mode ridge waveguide lasers; temperature-dependent large signal modulation; threshold current; Current measurement; Gallium arsenide; Land surface temperature; Laser transitions; Potential well; Quantum dot lasers; Stationary state; Threshold current; Waveguide lasers; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
Type :
conf
DOI :
10.1109/DRC.2001.937862
Filename :
937862
Link To Document :
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