DocumentCode
3302354
Title
NpN InGaAsN-based heterojunction bipolar transistors with f/sub max/ = 60 GHz
Author
Monier, C. ; Baca, A.G. ; Newman, F. ; Chang, P.C. ; Li, N.Y. ; Hou, H.Q. ; Armour, E. ; Stall, R.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2001
fDate
25-27 June 2001
Firstpage
43
Lastpage
44
Abstract
Microwave measurements from 3x5 /spl mu/m/sup 2/ self-aligned NpN InGaAsN DHBT devices indicate that this low band gap material system can be successfully implemented in a GaAs-based HBT structure for lowering the turn-on voltage while attaining high-speed performance.
Keywords
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; heterojunction bipolar transistors; high-frequency effects; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; 3 micron; 5 micron; 60 GHz; GaAs-based HBT structure; InGaAsN; NpN InGaAsN-based heterojunction bipolar transistors; high-speed performance; low band gap material; microwave measurements; self-aligned NpN InGaAsN DHBT devices; turn-on voltage; Bipolar transistors; Cutoff frequency; Gallium arsenide; Heterojunction bipolar transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2001
Conference_Location
Notre Dame, IN, USA
Print_ISBN
0-7803-7014-7
Type
conf
DOI
10.1109/DRC.2001.937864
Filename
937864
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