Title :
Noise characteristics of highly strained InGaP/InGaAs p-HEMTs grown on patterned substrates by using compound-source MBE
Author :
Jeong Hoon Kim ; Sung-June Jo ; Jong-In Song
Author_Institution :
Dept. of Inf. & Commun., K-JIST, Kwangju, South Korea
Abstract :
In this paper, we report on the low-frequency and microwave noise characteristics of the highly strained InGaP/In/sub 0.33/Ga/sub 0.67/As p-HEMTs grown on patterned substrate and the conventional InGaP/In/sub 0.22/Ga/sub 0.78/As p-HEMTs grown on non-patterned substrate.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; molecular beam epitaxial growth; semiconductor device noise; InGaP-In/sub 0.22/Ga/sub 0.78/As; InGaP-In/sub 0.33/Ga/sub 0.67/As; compound-source MBE growth; low-frequency noise; microwave noise; nonpatterned substrate; patterned substrate; strained InGaP/InGaAs p-HEMT; Electron mobility; Gallium arsenide; Indium gallium arsenide; Low-frequency noise; Noise figure; Noise measurement; Optical noise; PHEMTs; Transconductance; Voltage;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937865
