DocumentCode
3302388
Title
Electrical profiling of collector and base doping concentration
Author
Chiu, T.-Y. ; Sung, J.J. ; Pavlo, J. ; Liu, T.-Y.M. ; Lee, K.F. ; Possanza, W. ; Moerschel, K.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
fYear
1991
fDate
8-11 Dec. 1991
Firstpage
849
Lastpage
852
Abstract
A method for electrically profiling the collector carrier density of a bipolar device is reported. The base doping profile is also obtainable. This measurement technique is also useful in monitoring epi thickness and base width. The measurements are simple, economical, and accurate.<>
Keywords
bipolar transistors; capacitance measurement; carrier density; doping profiles; semiconductor device testing; base doping profile; base width; bipolar device; collector carrier density; doping concentration; electrical profiling; emitter to collector capacitance; epi thickness; Capacitance measurement; Charge carrier density; Doping profiles; Electrodes; Monitoring; Noise measurement; Parasitic capacitance; Rough surfaces; Surface roughness; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0243-5
Type
conf
DOI
10.1109/IEDM.1991.235292
Filename
235292
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