Dual-channel SOI LIGBT with improved latch-up and forward voltage drop characteristics

Author

Choi, Woo-Beom ; Sung, Woong-Je ; Lee, Yong-Il ; Sung, ManYoung

Author_Institution

Dept. of Electr. Eng., Korea Univ., Seoul, South Korea

fYear

2001

fDate

25-27 June 2001

Firstpage

53

Lastpage

54

Abstract

To improve latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT), a new dual-channel structure is proposed and fabricated in this paper. The dual-channel structure is employed to enable more electrons to flow into the n-drift layer and improve the latch-up characteristic. This dual-channel SOI LIGBT results in significant improvement in latch-up current density. Simulated results indicate that the latch-up current density is improved by 4 times compared to that of the conventional SOI LIGBT. The dual-channel SOI LIGBT´s were fabricated using a high voltage CMOS fabrication process.

Keywords

insulated gate bipolar transistors; silicon-on-insulator; dual-channel SOI LIGBT; forward voltage drop; high-voltage CMOS fabrication process; latch-up current density; power device; silicon-on-insulator lateral insulated gate bipolar transistor; Anodes; CMOS process; Cathodes; Current density; Doping; Electrons; Insulated gate bipolar transistors; Silicon on insulator technology; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2001

Conference_Location

Notre Dame, IN, USA

Print_ISBN

0-7803-7014-7

Type

conf

DOI

10.1109/DRC.2001.937868

Filename

937868