DocumentCode :
3302437
Title :
Chaos generator MMIC´s using resonant tunneling diodes
Author :
Maezawa, K. ; Kawano, Y. ; Ohno, Y. ; Kishimoto, S. ; Mizutani, T.
Author_Institution :
Graduate Sch. of Eng., Nagoya Univ., Japan
fYear :
2001
fDate :
25-27 June 2001
Firstpage :
55
Lastpage :
56
Abstract :
Recently, applications of chaos, which is often observed in nonlinear circuits, have been studied intensively in the field of information processing and communication systems. Using resonant tunneling devices to make such nonlinear circuits has many advantages, for example, simplicity in circuit, high operation frequency and low power consumption. In this paper, we report the demonstration of high-frequency operations of the chaos generator microwave monolithic ICs consisting of an RTD and a high electron mobility transistor (HEMT).
Keywords :
HEMT integrated circuits; MMIC; chaos generators; resonant tunnelling diodes; chaos generator MMIC; high electron mobility transistor; high-frequency operation; nonlinear circuit; resonant tunneling diode; Chaos; Chaotic communication; Diodes; Energy consumption; Frequency; HEMTs; Information processing; Nonlinear circuits; RLC circuits; Resonant tunneling devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
Type :
conf
DOI :
10.1109/DRC.2001.937869
Filename :
937869
Link To Document :
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