Title :
Device level simulation of second harmonic generation in 6-mm noncentrosymmetric semiconductor
Author :
Eldessouki, Mohamed S. ; Elsayed, Amira A. ; Elbadawy, Elsayed A.
Author_Institution :
Gen. Adm. for Studies & Designs Vice-Presidency for Projects, King Saud Univ., Riyadh, Saudi Arabia
Abstract :
This paper presents a numerical solution for the second harmonic generation (SHG) inside a 6-mm n-type noncentrosymmetric semiconductor subjected to highly intense transverse magnetic (TM) laser wave in a semiconductor grounded slab taking the field-carrier interaction into account.
Keywords :
laser materials processing; optical harmonic generation; device level simulation; field-carrier interaction; highly intense transverse magnetic laser wave; n-type noncentrosymmetric semiconductor; numerical solution; second harmonic generation; semiconductor grounded slab; size 6 mm; Jacobian matrices; Optical fiber testing; Radiative recombination; Slabs; Nonlinear optics; noncentrosymmetric 6-mm semiconductor; screening effect; second harmonic generation; second order nonlinear susceptibility;
Conference_Titel :
High Capacity Optical Networks and Enabling Technologies (HONET), 2011
Conference_Location :
Riyadh
Print_ISBN :
978-1-4577-1170-1
DOI :
10.1109/HONET.2011.6149810
