DocumentCode
3302613
Title
Device level simulation of second harmonic generation in 6-mm noncentrosymmetric semiconductor
Author
Eldessouki, Mohamed S. ; Elsayed, Amira A. ; Elbadawy, Elsayed A.
Author_Institution
Gen. Adm. for Studies & Designs Vice-Presidency for Projects, King Saud Univ., Riyadh, Saudi Arabia
fYear
2011
fDate
19-21 Dec. 2011
Firstpage
169
Lastpage
173
Abstract
This paper presents a numerical solution for the second harmonic generation (SHG) inside a 6-mm n-type noncentrosymmetric semiconductor subjected to highly intense transverse magnetic (TM) laser wave in a semiconductor grounded slab taking the field-carrier interaction into account.
Keywords
laser materials processing; optical harmonic generation; device level simulation; field-carrier interaction; highly intense transverse magnetic laser wave; n-type noncentrosymmetric semiconductor; numerical solution; second harmonic generation; semiconductor grounded slab; size 6 mm; Jacobian matrices; Optical fiber testing; Radiative recombination; Slabs; Nonlinear optics; noncentrosymmetric 6-mm semiconductor; screening effect; second harmonic generation; second order nonlinear susceptibility;
fLanguage
English
Publisher
ieee
Conference_Titel
High Capacity Optical Networks and Enabling Technologies (HONET), 2011
Conference_Location
Riyadh
Print_ISBN
978-1-4577-1170-1
Type
conf
DOI
10.1109/HONET.2011.6149810
Filename
6149810
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