Title :
Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers
Author :
Khan, M. Zahed M ; Ng, Tien K. ; Ooi, Boon S.
Author_Institution :
Div. of Phys. Sci. & Eng., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
Abstract :
The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance.
Keywords :
III-V semiconductors; carrier relaxation time; current density; indium compounds; quantum dash lasers; spectral line broadening; InAs-InP; carrier relaxation lifetime; carrier-photon rate equation model; inhomogeneous broadening; quantum-dash lasers; threshold current density; Equations; Nonhomogeneous media; Optical reflection; Quantum mechanics; Quantum-dash laser; inhomogeneous broadening; rate equation model; relaxation process;
Conference_Titel :
High Capacity Optical Networks and Enabling Technologies (HONET), 2011
Conference_Location :
Riyadh
Print_ISBN :
978-1-4577-1170-1
DOI :
10.1109/HONET.2011.6149813
