A comparison of bulk and SOI deep sub-micron MOSFET small-signal behavior in the high-frequency regime beyond 10 GHz

Author

Goldman, D. ; Gafron, T. ; Kim, C.S. ; Nguyen, Q. ; Burke, F. ; Cheek, B. ; Parke, S.

Author_Institution

Dept. of Electr. & Comput. Eng., Boise State Univ., ID, USA

fYear

2001

fDate

25-27 June 2001

Firstpage

83

Lastpage

84

Abstract

We investigate the small-signal behavior of SOI CMOS devices. The small signal parameters include: power gain, transconductance, input resistance, output resistance, input and output capacitance. These characteristics were compared to bulk CMOS at RF frequencies above 10 GHz. Analysis of these results, show a great reduction in the negative impacts of both the parasitic S/D resistance and parasitic BJT floating-body effects on RF circuits at the 10 GHz regime.

Keywords

MOSFET; amplification; capacitance; electric admittance; electric resistance; silicon-on-insulator; 10 to 20 GHz; SOI CMOS devices; SOI deep sub-micron MOSFET; Si; bulk CMOS; high-frequency regime; input capacitance; input resistance; output capacitance; output resistance; parasitic BJT floating-body effects; parasitic S/D resistance; power gain; small-signal behavior; transconductance; Baseband; CMOS process; Coplanar waveguides; Electric resistance; Immune system; MOSFET circuits; Parasitic capacitance; Probes; Radio frequency; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2001

Conference_Location

Notre Dame, IN, USA

Print_ISBN

0-7803-7014-7

Type

conf

DOI

10.1109/DRC.2001.937883

Filename

937883