Title :
Threshold voltage shift by quantum confinement in ultra-thin body device
Author :
Yang-Kyu Choi ; Daewon Ha ; Tsu-Jae King ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The threshold voltage shift caused by quantum confinement in ultra-thin body devices (UTB) is observed experimentally. An analytical model is proposed and shows a good agreement with the experimental data of both PMOSFET and NMOSFET. It predicts a larger threshold voltage shift for a lighter body-doping, which is opposite to the trend in the bulk device. This threshold voltage shift must be taken into account in the design of UTB devices, including the double gate MOSFET.
Keywords :
MOSFET; semiconductor device models; NMOSFET; PMOSFET; double gate MOSFET; quantum confinement; threshold voltage; ultra-thin body devices; Analytical models; Contracts; Current measurement; Doping; MOSFET circuits; Poisson equations; Potential well; Semiconductor process modeling; Thickness measurement; Threshold voltage;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937884
