DocumentCode
3302834
Title
Low voltage, high speed RF switch with high switching capacitance ratio
Author
Pakula, Lukasz S. ; French, Patrick J. ; Yang, Heng
Author_Institution
Dept. of Microelectron. & Computed Eng., Delft Univ. of Technol.
fYear
2005
fDate
Oct. 30 2005-Nov. 3 2005
Abstract
In this paper the principle, design and fabrication process of low-voltage, high speed RF switch is presented. The aluminium as the electrodes and the PECVD silicon carbide were selected as electrodes and shield materials, respectively. The operating voltage as low as 0.8 volt and high switching capacitance ratio of 180 is reported
Keywords
aluminium; chemical vapour deposition; electrodes; low-power electronics; microwave switches; silicon compounds; wide band gap semiconductors; Al; PECVD silicon carbide; SiC; radiofrequency switch; shield materials; switching capacitance ratio; Capacitance; Damping; Elastic recovery; Electrodes; Electrostatics; Energy consumption; Low voltage; Optical switches; Radio frequency; Springs;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2005 IEEE
Conference_Location
Irvine, CA
Print_ISBN
0-7803-9056-3
Type
conf
DOI
10.1109/ICSENS.2005.1597740
Filename
1597740
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