Title :
Shear mode AlN thin film electroacoustic resonator for biosensor applications
Author :
Wingqvist, G. ; Bjurström, J. ; Liljeholm, L. ; Katardjiev, I. ; Spetz, A. Lloyd
Author_Institution :
Dept. of Solid State Electron., Uppsala Univ.
fDate :
Oct. 30 2005-Nov. 3 2005
Abstract :
A thin film thickness excited shear acoustic wave resonator is presented. Utilizing a newly developed reactive sputtering process AlN thin films with inclined c-axis relative to the surface normal with a mean tilt of around 30deg are successfully grown. Using the above process, a biosensor consisting of a shear mode thin film bulk acoustic resonator (FBAR) and a microfluidic transport system was fabricated. The biosensor operation in water, glycerol and albumin was characterized. The resonator had a resonance frequency of around 1.2 GHz and a Q value in water of around 150. Results concerning the stability and resolution are also presented. The results demonstrate clearly the potential of FBAR biosensors for the fabrication of highly sensitive low cost biosensors, bioanalytical tools as well as for liquid sensing in general
Keywords :
Q-factor; acoustic resonators; aluminium compounds; biosensors; bulk acoustic wave devices; microfluidics; semiconductor thin films; sputtering; wide band gap semiconductors; AlN; Q factor; acoustic wave resonator; albumin; biosensor; glycerol; microfluidic transport system; quasishear polarized acoustic wave; reactive sputtering; shear mode thin film bulk acoustic resonator; thin film electroacoustic resonator; Acoustic waves; Biosensors; Film bulk acoustic resonators; Microfluidics; Resonance; Resonant frequency; Sputtering; Stability; Surface acoustic waves; Transistors;
Conference_Titel :
Sensors, 2005 IEEE
Conference_Location :
Irvine, CA
Print_ISBN :
0-7803-9056-3
DOI :
10.1109/ICSENS.2005.1597743
