Characteristics of submicron HBTs in the 140-220 GHz band

Author

Urteaga, M. ; Scott, D. ; Mathew, T. ; Krishnan, S. ; Wei, Y. ; Dahlstrom, M. ; Rodwell, M.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2001

fDate

25-27 June 2001

Firstpage

101

Lastpage

102

Abstract

Reports the measurement of submicron transferred-substrate InGaAs/InAlAs heterojunction bipolar transistors (HBTs) in the 140-220 GHz frequency band. We believe this is the first reported characterization of HBTs above 110 GHz. Previous measurements of transferred-substrate HBTs have predicted record values of power gain cutoff frequency by extrapolating at -20 dB/decade the unilateral power gain measured at 110 GHz. Due to uncertainties associated with our measurement techniques, the unilateral power gain could not be determined for higher-gain devices. Additionally, transistor S-parameters measured in the 140-220 GHz band do not correlate well with a hybrid-pi model derived from measurements at lower (6-45 GHz) frequencies.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device measurement; semiconductor device models; 140 to 220 GHz; III V semiconductors; InGaAs-InAlAs; InGaAs/InAlAs; hybrid-pi model; power gain cutoff frequency; submicron HBTs; transferred-substrate heterojunction bipolar transistors; transistor S-parameters; unilateral power gain; Calibration; Electrical resistance measurement; Electromagnetic measurements; Frequency measurement; Gain measurement; Heterojunction bipolar transistors; Measurement standards; Phase measurement; Power measurement; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2001

Conference_Location

Notre Dame, IN, USA

Print_ISBN

0-7803-7014-7

Type

conf

DOI

10.1109/DRC.2001.937892

Filename

937892