Channel hot-carrier induced oxide charge trapping in NMOSFET´S

Author

Chen, Wenliang ; Ma, T.P.

Author_Institution

Yale Univ., New Haven, CT, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

731

Lastpage

734

Abstract

Localized oxide charge trapping in N-channel MOSFETs caused by channel-hot-carrier (CHC) injection has been studied by the use of a modified charge-pumping technique. Depending on the CHC injection conditions, trapping of either positive or negative oxide charge, along with an increase in the interface-trap density, has been measured by this technique with excellent sensitivity. Evidence for the dynamic evolution of the damage location during DC CHC stressing is presented. The technique can also be readily extended to P-channel MOSFETs, as demonstrated by an example.<>

Keywords

charge measurement; dielectric thin films; electron traps; hole traps; hot carriers; insulated gate field effect transistors; DC CHC stressing; N-channel MOSFETs; P-channel MOSFETs; channel-hot-carrier injection; charge trapping measurement; charge-pumping technique; damage location; dynamic evolution; interface-trap density; oxide charge trapping; Channel bank filters; Charge measurement; Charge pumps; Current measurement; Degradation; Electron traps; Hot carriers; MOSFET circuits; Probes; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235319

Filename

235319