Title :
A 3-D BPSG flow simulation with temperature and impurity concentration dependent viscosity model
Author :
Umimoto, H. ; Odanaka, S. ; Imai, S.
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Osaka, Japan
Abstract :
A BPSG flow simulation with a newly developed viscosity model is described. The viscosity model allows a 3-D BPSG flow simulation in a wide range of flow temperature and impurity concentration in the BPSG. STM observation and 3-D BPSG flow simulation using this viscosity model reveal a significant difference in the flow behavior at 850 degrees C and at 900 degrees C. The temperature dependence of the 3-D BPSG flow behavior is clarified. It is found that the 3-D BPSG flow behavior is characterized by universal curves of the surface height using the viscosity model.<>
Keywords :
borosilicate glasses; flow simulation; laminar flow; phosphosilicate glasses; semiconductor process modelling; 3-D BPSG flow simulation; B2O3-P2O5-SiO2; BPSG; STM observation; flow behavior; glass; impurity concentration; surface height; temperature; temperature dependence; universal curves; viscosity model; viscous flow; Annealing; Fluorescence; Planarization; Semiconductor device modeling; Semiconductor impurities; Surface topography; Temperature dependence; Temperature distribution; Viscosity; Wiring;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235324
