Title :
Simulation of two-dimensional implantation profiles with a large concentration range in crystalline silicon using an advanced Monte Carlo method
Author :
Hobler, G. ; Potzl, H.
Author_Institution :
Inst. fuer Allgemeine Elektrotech. und Elektronik, Tech. Univ. Vienna, Austria
Abstract :
Realistic two-dimensional as-implanted boron distributions in crystalline silicon are presented. The results are reliable in a concentration range extending to four orders of magnitude below the peak concentration. The dependence of lateral channeling on wafer tilt, mask edge orientation, screening oxide thickness, and implantation energy is investigated. The important role of <110> channeling is demonstrated. A novel model describing electronic stopping in <110> channeling correctly as well as several numerical methods reducing computation times are introduced.<>
Keywords :
Monte Carlo methods; boron; channelling; digital simulation; doping profiles; electronic engineering computing; elemental semiconductors; ion implantation; semiconductor process modelling; silicon; <110> channeling; Monte Carlo method; as implanted B distributions; computation times reduction; concentration range; crystalline Si:B; dependence of lateral channeling; electronic stopping; implantation energy; mask edge orientation; model; numerical methods; screening oxide thickness; two-dimensional implantation profiles; wafer tilt; Boron; Crystallization; Doping profiles; Histograms; Ion implantation; MOSFETs; Monte Carlo methods; Semiconductor device modeling; Semiconductor process modeling; Silicon;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235328
