Title :
CMOS compatible 3D flow and thermal sensors in SOI technology
Author :
André, N. ; Iker, F. ; Jorez, S. ; Raskin, J.P.
Author_Institution :
CeRMiN, Univ. Catholique de Louvain, Louvain-la-Neuve
fDate :
Oct. 30 2005-Nov. 3 2005
Abstract :
Three-dimensional (3D) self-assembled microstructures are employed in various applications ranging from isolated inductors to tunable capacitors or micro-mirrors. In this article, we present interdigitated capacitors for flow and thermal sensing and circular-shaped bolometers for thermal applications, both based on a one-mask CMOS compatible silicon-on-insulator (SOI) process. We obtained a detection range of 0 to 20 m/s for flow with a variation of 450 MHz in resonance frequency or 9 fF in capacitance for a change of one meter per second and a detection range of 20 to 320deg C with a variation of 600 MHz in resonance frequency for a change of 10deg C. These flow and thermal sensors were also studied from a theoretical point of view simulating the capacitive transducer using finite element softwares which agreed well with measurements
Keywords :
CMOS integrated circuits; bolometers; flow sensors; microsensors; self-assembly; silicon-on-insulator; temperature sensors; 10 C; 20 to 320 C; 3D self-assembled microstructures; 450 MHz; 600 MHz; 9 fF; CMOS silicon-on-insulator; capacitive transducer; circular-shaped bolometers; finite element softwares; flow sensors; interdigitated capacitors; resonance frequency; thermal sensing; thermal sensors; Bolometers; CMOS technology; Capacitors; Inductors; Isolation technology; Microstructure; Resonance; Resonant frequency; Silicon on insulator technology; Thermal sensors;
Conference_Titel :
Sensors, 2005 IEEE
Conference_Location :
Irvine, CA
Print_ISBN :
0-7803-9056-3
DOI :
10.1109/ICSENS.2005.1597758
