High-speed waveguide avalanche photodetectors

Author

Kinsey, G.S. ; Sidhu, R. ; Holmes, A.L., Jr. ; Campbell, J.C. ; Dentai, A.G.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2001

fDate

25-27 June 2001

Firstpage

149

Lastpage

150

Abstract

Avalanche photodetectors are becoming increasingly attractive as a means to boost sensitivity in optical communications systems. An edge-coupled waveguide configuration allows the absorption region to be thinned in order to reduce carrier transit times without compromising sensitivity. An AlGaAs/GaAs waveguide avalanche photodetector (WG-A-PD) was demonstrated with a maximum bandwidth of 32 GHz and a gain-bandwidth product of 110 GHz. An InGaAs/InAlAs waveguide avalanche photodetector was demonstrated with a bandwidth of 28 GHz at low gains and an external quantum efficiency of 16% at 1.55 /spl mu/m. The gain-bandwidth product of 320 GHz is the highest reported for an APD.

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical waveguide components; photodetectors; 1.55 micron; 16 percent; 28 GHz; 32 GHz; AlGaAs-GaAs; InGaAs-InAlAs; bandwidth; carrier transit time; edge-coupled waveguide; external quantum efficiency; gain-bandwidth product; high-speed response; sensitivity; waveguide avalanche photodetector; Absorption; Bandwidth; Gallium arsenide; High speed optical techniques; Indium gallium arsenide; Microelectronics; Optical noise; Optical sensors; Optical waveguides; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2001

Conference_Location

Notre Dame, IN, USA

Print_ISBN

0-7803-7014-7

Type

conf

DOI

10.1109/DRC.2001.937908

Filename

937908