Title :
Floating-body effect free concave SOI-MOSFETs (COSMOS)
Author :
Hieda, K. ; Takedai, S. ; Takahashi, M. ; Yoshimi, M. ; Takato, H. ; Nitayama, A. ; Horiguchi, F.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
In order to overcome the degradation induced by floating body effects and to suppress the increase in parasitic source/drain resistances in thin-film silicon-on-insulator (SOI) MOSFETs, a concave SOI-MOSFET (COSMOS) is proposed. This structure realizes a partially thin-film SOI region, which is used as a fully depleted channel, and thick-film SOI regions, which are used as source/drain. The unique features of the COSMOS are found to be (1) elimination of the floating-body effects, (2) less short channel effect, (3) excellent subthreshold characteristics, and (4) reduction in parasitic source/drain resistances.<>
Keywords :
insulated gate field effect transistors; semiconductor-insulator boundaries; COSMOS; concave SOI-MOSFETs; features; floating body effect suppression; fully depleted channel; parasitic resistance suppression; partially thin-film SOI region; short channel effect suppression; subthreshold characteristics; thick-film SOI regions; Contact resistance; Doping; Electric breakdown; Immune system; Impact ionization; Impurities; Length measurement; MOSFET circuits; Threshold voltage; Transistors;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235334
