Title :
Nano-transistor modeling: two dimensional Green´s function method
Author :
Svizhenko, A. ; Anantram, M.P. ; Govindan, T.R. ; Biegel, B.
Author_Institution :
NASA Ames Res. Center, Moffett Field, CA, USA
Abstract :
We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green´s function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Acoustic phonon scattering is included, causing transport to deviate from ballistic in a realistic manner. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Self consistent solution of Poisson-NEGF equations is numerically intensive because of the number of spatial and energy coordinates involved. This makes the use of parallel/distributed computing imperative.
Keywords :
Green´s function methods; MOSFET; Poisson equation; SCF calculations; conduction bands; digital simulation; effective mass; electron-phonon interactions; high field effects; interface states; nanotechnology; quantum interference phenomena; semiconductor device models; tunnelling; 2-D device simulation; 2-D nanoscale transistors; 25 nm; 90 nm; MOSFET; Poisson-NEGF equations; acoustic phonon scattering; anisotropic effective mass approximation; ballistic current; computer code; conduction band; nano-transistor modeling; nonequilibrium Green´s function; open boundary conditions; oxide tunneling; parallel/distributed computing; self consistent solution; two dimensional Green´s function method; Acoustic devices; Acoustic scattering; Boundary conditions; Computational modeling; Computer simulation; Green´s function methods; Particle scattering; Phonons; Physics computing; Tunneling;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937917
