A coupled Schrodinger/Monte Carlo technique for quantum-corrected device simulation

The authors present a new model for quantum-corrected full-band Monte Carlo device simulation which accounts for quantum repulsion at the silicon/gate-insulator interface through a self-consistent coupling with the Schrodinger equation. In a coupled Monte Carlo-Schrodinger simulation, the Schrodinger equation is periodically solved along 1-D slices of a 2-D domain. The quantum concentration slices are regarded as envelope functions for the Monte Carlo solution, and the Monte Carlo potential is corrected to reflect their shape. The correction is formulated in such a way that it is not a function of the particular magnitude of the quantum concentration, and thus there is no problem posed by the absence of the fermi level concept in a Monte Carlo model. In this work, the Monte Carlo-Schrodinger method is applied to a MOS capacitor for a wide range of biases, and is compared to self-consistent Schrodinger-Poisson calculations for validation. Preliminary results for a 2-D MOSFET simulation are also presented.