NBTI-enhanced hot carrier damage in p-channel MOSFETs

Author

Doyle, B.S. ; Fishbein, B.J. ; Mistry, K.R.

Author_Institution

Digital Equipment Corp., Hudson, MA, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

529

Abstract

The behavior of p-MOS devices at elevated temperatures has been studied with respect to hot carrier stress. It is found that the hot carrier stress damage at V/sub g/=V/sub d/ increases as temperature increases, contrary to conventional hot carrier behavior. The cause of the damage is identified as being negative bias temperature instability (NBTI)-related, which is greatly accelerated under hot carrier stress conditions. A comparison of the AC hot carrier lifetimes at T=25 and 125 degrees C shows that the damage behavior is quite different, the low-temperature stress resulting in an increase in drive current, while the NBTI-dominated high-temperature stress shows a decrease in drive current. It is concluded that this can be the major source of hot carrier damage at elevated temperatures (>or=100 degrees C) in the AC stressing of p-MOS transistors.<>

Keywords

carrier lifetime; hot carriers; insulated gate field effect transistors; stability; 125 degC; 25 degC; AC hot carrier lifetimes; AC stressing; NBTI-enhanced hot carrier damage; PMOS devices; PMOSFET; drive current; elevated temperatures; hot carrier stress; negative bias temperature instability; p-MOS transistors; p-channel MOSFET; Degradation; Hot carriers; Interface states; MOSFETs; Negative bias temperature instability; Niobium compounds; Stress; Titanium compounds; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235340

Filename

235340