Title :
Rare-earth doped GaN electroluminescent devices for robust flat panel displays
Author :
Heikenfeld, J. ; Stecki, A.J.
Author_Institution :
Nanoelectronics Lab, Cincinnati Univ., OH, USA
Abstract :
The authors discuss the improvements required to make GaN:RE AC-ELDs overtake ZnS-based AC ELDs and possibly other flat panel devices (FPD) devices. Similar to the potential of other AC-ELD technologies, advances in GaN:RE AC-ELDs could be strongly considered for applications such as flat TVs.
Keywords :
III-V semiconductors; electroluminescent displays; flat panel displays; gallium compounds; phosphors; rare earth metals; wide band gap semiconductors; FPD devices; GaN; GaN:RE AC-ELDs; electroluminescent display devices; flat TVs; flat panel displays; rare earth doped GaN phosphors; Brightness; Chemicals; Electroluminescent devices; Flat panel displays; Frequency; Gallium nitride; Glass; Phosphors; Robustness; Voltage;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937921
