High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology

One promising approach for fabricating high-performance poly-Si TFTs is to place entire channel within a single grain of poly-Si films. To realize these devices, large grains must be formed at controlled positions. In solid phase crystallization (SPC) of amorphous Si, there have been proposed methods such as ion implantation and metal imprint technology to induce nucleation at desired sites. In this work, we demonstrate TFTs fabricated in single-grains of poly-Si films prepared by the metal- imprint technology. It is shown that the single-grain TFTs have superior performance in terms of switching behavior and uniformity in characteristics to those fabricated on conventional SPC poly-Si films.