DocumentCode
3303483
Title
Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes
Author
Hsu, P.I. ; Gleskova, H. ; Suo, Z. ; Wagner, S. ; Sturm, J.C.
Author_Institution
Center for Photonics & Optoelectronic Mater., Princeton Univ., NJ, USA
fYear
2001
fDate
25-27 June 2001
Firstpage
193
Lastpage
194
Abstract
In this paper we report the first transistors fabricated on a substrate that is then plastically deformed. Using amorphous silicon (a-Si) device islands on a polyimide substrate, TFTs can withstand an average substrate strain of 6%, as the substrate is deformed into a spherical cap shape subtending angles as large as 66/spl deg/ (1 steradian solid angle).
Keywords
amorphous semiconductors; elemental semiconductors; plastic deformation; silicon; substrates; thin film transistors; 3D shape; Si; amorphous silicon TFT; large-area electronics; plastic deformation; polyimide substrate; Amorphous materials; Amorphous silicon; Capacitive sensors; Fabrication; Plastics; Polyimides; Sensor arrays; Shape; Substrates; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2001
Conference_Location
Notre Dame, IN, USA
Print_ISBN
0-7803-7014-7
Type
conf
DOI
10.1109/DRC.2001.937928
Filename
937928
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