An isotropic best-fitting band model for electron and hole transport in silicon

As isotropic model for the silicon band structure which accurately approximates both density of states and group velocity of the real anisotropic band structure and yields excellent agreement with both the collision and nonhomogeneous terms of the Boltzmann transport equation has been developed. The model, represented through a simple set of energy-wave vector tables, has been implemented in a Monte Carlo device simulator, but can also be extended to alternative methods for solving the Boltzmann equation. Simulations of homogeneous silicon bars show a very good agreement with available experimental data.<>