DocumentCode
3303498
Title
Gate control in ultra-short channel double-gate MOSFETs accounting for 2D and quantum confinement effects
Author
Mouis, M. ; Genin, F.-N. ; Poncet, A.
Author_Institution
LETI/DTS/CPMA, CEA-Grenoble, Grenoble, France
fYear
2001
fDate
25-27 June 2001
Firstpage
195
Lastpage
196
Abstract
We establish here for the first time how 2D effects are affecting carrier confinement and gate control in the channel of ultra-short gate DG-MOSFETs by solving the Poisson and Schrodinger equations self-consistently in the 2D section of a device. The results are discussed in reference to what is obtained from a 2D classical simulation (no confinement : Poisson equation with a bulk statistics) and from a 1D quantum simulation (confinement effects in a long gate device).
Keywords
MOSFET; Poisson equation; Schrodinger equation; semiconductor device models; 2D quantum confinement; Poisson equation; Schrodinger equation; gate control; numerical simulation; ultra-short-channel double-gate MOSFET; Carrier confinement; Electrons; Electrostatics; MOSFETs; Poisson equations; Potential well; Robustness; Silicon; Statistics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2001
Conference_Location
Notre Dame, IN, USA
Print_ISBN
0-7803-7014-7
Type
conf
DOI
10.1109/DRC.2001.937929
Filename
937929
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