Evaluation of the influence of convective energy in HBTs using a fully hydrodynamic model

Author

Benvenuti, A. ; Pinto, M.R. ; Coughran, W.M., Jr. ; Schryer, N.L. ; Naldi, C.U. ; Ghione, G.

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

499

Lastpage

502

Abstract

A 1-D, parabolic-band, full-hydrodynamic model is developed and applied to the simulation of heterojunction bipolar transistors (HBTs). A unique feature of this approach is the ability to continuously vary numerical, physical, and structural parameters while achieving a completely self-consistent solution at any condition. Using continuation in conjunction with critical terms in the model, one is able to analyze and compare the predictions of a compatible set of hierarchical (drift-diffusion to energy balance to hydrodynamic) models. As a result, this analysis should enable the development of computationally efficient models with suitable accuracy for design and optimization of high-performance devices.<>

Keywords

heterojunction bipolar transistors; semiconductor device models; 1D parabolic band model; HBTs; convective energy; heterojunction bipolar transistors; hydrodynamic model; Computational modeling; Design optimization; Equations; Finite difference methods; Heterojunction bipolar transistors; Hydrodynamics; Moment methods; Predictive models; Spline; Structural engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235347

Filename

235347