Title :
Evaluation of the influence of convective energy in HBTs using a fully hydrodynamic model
Author :
Benvenuti, A. ; Pinto, M.R. ; Coughran, W.M., Jr. ; Schryer, N.L. ; Naldi, C.U. ; Ghione, G.
Abstract :
A 1-D, parabolic-band, full-hydrodynamic model is developed and applied to the simulation of heterojunction bipolar transistors (HBTs). A unique feature of this approach is the ability to continuously vary numerical, physical, and structural parameters while achieving a completely self-consistent solution at any condition. Using continuation in conjunction with critical terms in the model, one is able to analyze and compare the predictions of a compatible set of hierarchical (drift-diffusion to energy balance to hydrodynamic) models. As a result, this analysis should enable the development of computationally efficient models with suitable accuracy for design and optimization of high-performance devices.<>
Keywords :
heterojunction bipolar transistors; semiconductor device models; 1D parabolic band model; HBTs; convective energy; heterojunction bipolar transistors; hydrodynamic model; Computational modeling; Design optimization; Equations; Finite difference methods; Heterojunction bipolar transistors; Hydrodynamics; Moment methods; Predictive models; Spline; Structural engineering;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235347
