Quantum-mechanical threshold voltage shifts of MOSFETs caused by high levels of channel doping

Author

van Dort, M.J. ; Woerlee, P.H. ; Walker, A.J. ; Juffermans, C.A.H. ; Lifka, H.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

495

Lastpage

498

Abstract

The impact of high doping levels on the threshold voltage of MOS transistors is discussed. The threshold voltage of surface channel devices is shown to be affected through the quantum-mechanical splitting of the energy levels in the conduction band. A significant threshold voltage shift is reported at room temperature for deep-submicron n-channel devices and needs to be taken into account in the design of the devices. A simple analytical model to account for this effect is proposed.<>

Keywords

conduction bands; insulated gate field effect transistors; semiconductor device models; semiconductor doping; MOS transistors; MOSFET; channel doping; conduction band; deep-submicron n-channel devices; energy levels; high doping levels; model; quantum-mechanical splitting; surface channel devices; threshold voltage shifts; Doping; Electrons; Laboratories; MOS devices; MOSFETs; Performance evaluation; Semiconductor device modeling; Semiconductor process modeling; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235348

Filename

235348