The effect of emitter implant and anneal on high-voltage 4H-SiC BJTs

Author

Yi Tang ; Fedison, J.B. ; Chow, T.P.

Author_Institution

Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2001

fDate

25-27 June 2001

Firstpage

209

Lastpage

210

Abstract

We previously reported the first implanted-emitter bipolar transistor in 4H-SiC. The device showed a record-high common emitter current gain of 40, and forward drop of 1 V at forward current density of 50A/cm/sup 2/. The open-base breakdown voltage was less than 60 V due to the very small base width (<0.2 μm). In this work, improved epi-base, implanted-emitter, npn bipolar junction transistor is reported with increased base width and improved emitter anneal. The devices showed a blocking voltage of 500 V and maximum common emitter current gain of 8. Negative temperature coefficient is observed.

Keywords

annealing; avalanche breakdown; carrier density; impact ionisation; ion implantation; power bipolar transistors; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 1600 C; 4H-SiC BJTs; 500 V; SiC:N; SiC:P; background carrier concentration; blocking characteristics; blocking voltage; emitter anneal. effect; emitter implant effect; epi-base implanted-emitter transistor; high-voltage BJTs; negative temperature coefficient; npn bipolar junction transistor; open-base breakdown; open-emitter breakdown; sheet resistance; Annealing; Bipolar transistors; Contracts; Doping; Electric breakdown; Implants; Manufacturing; Silicon carbide; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2001

Conference_Location

Notre Dame, IN, USA

Print_ISBN

0-7803-7014-7

Type

conf

DOI

10.1109/DRC.2001.937935

Filename

937935