Title :
Spreaded-vertical-capacitor cell (SVC) for beyond 64 Mbit DRAMs
Author :
Matsuo, N. ; Nakata, Y. ; Ogawa, H. ; Yabu, T. ; Matsumoto, S. ; Sasago, M. ; Hashimoto, K. ; Okada, S.
Author_Institution :
Matsushita Electric Ind. Co. Ltd., Osaka, Japan
Abstract :
An advanced three-dimensionally (3-D) stacked capacitor cell, SVC, was developed. The SVC shows good electrical characteristics, and it realized a capacitance of 43 fF with a cell area of 1.8 mu m/sup 2/. The uniform formation of the capacitor-dielectric-film (oxide-nitride-oxide film: ONO) on the experimental storage electrode indicates the uniform deposition of the ONO film on all kinds of 3-D storage electrodes including that of the SVC. The SVC is the most promising cell structure for beyond 64 Mbit DRAMs (dynamic RAMs).<>
Keywords :
DRAM chips; MOS integrated circuits; 3D stacked capacitor cell; 43 fF; 64 Mbit; DRAMs; ONO film; SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/; capacitor-dielectric-film; dynamic RAMs; oxide-nitride-oxide film; spread vertical capacitor cell; Breakdown voltage; Capacitance; Capacitors; Current measurement; Electrodes; Fabrication; Foot; Leakage current; Random access memory; Static VAr compensators;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235353
