Title :
A self-amplifying (SEA) cell for future high density DRAMs
Author :
Sunouchi, K. ; Fuse, T. ; Hasegawa, T. ; Matsubara, Y. ; Watanabe, S. ; Horiguchi, F.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
One of the most serious problems in high-density DRAMs is the difficulty of realizing sufficient storage capacitance. In order to overcome this problem, the authors propose a self-amplifying (SEA) cell which can drastically reduce the storage capacitance without sacrificing chip performances. In the SEA cell, the physical storage capacitance can be reduced to the minimum value limited by soft errors. The SEA cell realizes 64-Mb/256-Mb DRAMs (dynamic RAMs) by using a simple stacked capacitor without complicated storage electrode structures such as a ´crown´ or ´fin´.<>
Keywords :
DRAM chips; capacitance; 256 Mbit; 64 Mbit; dynamic RAMs; high density DRAMs; self-amplifying cell; stacked capacitor; storage capacitance; Bipolar transistors; Capacitance; Capacitors; Dielectrics; Electrodes; Fabrication; Random access memory; Resistors; Ultra large scale integration; Writing;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235355
