A self-amplifying (SEA) cell for future high density DRAMs

One of the most serious problems in high-density DRAMs is the difficulty of realizing sufficient storage capacitance. In order to overcome this problem, the authors propose a self-amplifying (SEA) cell which can drastically reduce the storage capacitance without sacrificing chip performances. In the SEA cell, the physical storage capacitance can be reduced to the minimum value limited by soft errors. The SEA cell realizes 64-Mb/256-Mb DRAMs (dynamic RAMs) by using a simple stacked capacitor without complicated storage electrode structures such as a ´crown´ or ´fin´.<>