Characterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD

First electrical device results are reported for a novel low-temperature epitaxial deposition process, ultra-clean atmospheric pressure chemical vapor deposition (APCVD). APCVD has been used to grow blanket and selective epitaxial films of Si and Si/sub 1-x/Ge/sub x/ alloys without facets. Films have been grown with controllable n- and p-dopant profiles in reactors which include a commercial 125-200-mm single-wafer processor with integrated preclean capability, a high-temperature hydrogen preanneal. Large area (10/sup 5/ mu m/sup 2/) p-n junctions fabricated in epitaxial n- and p-type Si grown at a temperature as low as 625 degrees C show ideal behavior and low reverse leakage (1 fA/ mu m/sup 2/) at 5 V. MOS capacitors fabricated in epitaxial Si films show C-V and oxide breakdown characteristics comparable to those of devices fabricated in bulk substrates. These results have promising implications for the implementation of device-quality low-temperature epitaxy in a CVD reactor without vacuum pumps.<>