DocumentCode :
3303760
Title :
A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology
Author :
Nanba, Mitsuo ; Kobayashi, Takashi ; Uchino, Takashi ; Nakamura, Tohru ; Kondo, Masao ; Tamaki, Yohichi ; Iijima, Shimpei ; Kure, Tokuo ; Tanabe, Masamichi
Author_Institution :
Hitachi Ltd., Gunma, Japan
fYear :
1991
fDate :
8-11 Dec. 1991
Firstpage :
443
Lastpage :
446
Abstract :
A high-performance bipolar transistor technology has been developed for emitter formation using in-situ phosphorus doped polysilicon (IDP). Using this technology, a Si bipolar transistor was designed with a shallow emitter junction, an ultra-high current gain, and a cutoff frequency (f/sub T/) of 64 GHz. Furthermore, the product of f/sub T/ and BV ceo of 200 GHz-V has been achieved. This value is nearly equal to the physical limitation for homojunction silicon transistors. The technology reported here is believed to be very promising for future fabrication of ultra-high-speed high-density bipolar and BiCMOS VLSIs.<>
Keywords :
BiCMOS integrated circuits; VLSI; bipolar integrated circuits; bipolar transistors; elemental semiconductors; integrated circuit technology; phosphorus; semiconductor doping; silicon; 64 GHz; BiCMOS; Si bipolar transistor; Si:P; VLSIs; cutoff frequency; high-density; in-situ P doping; polysilicon emitter technology; semiconductors; shallow emitter junction; ultra-high current gain; ultra-high-speed; Amorphous silicon; Bipolar transistors; Conductivity; Cutoff frequency; Design engineering; Etching; Fabrication; Isolation technology; Laboratories; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0243-5
Type :
conf
DOI :
10.1109/IEDM.1991.235360
Filename :
235360
Link To Document :
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