Title :
42 GHz active frequency doubler in SiGe bipolar technology
Author :
Hackl, Sabine ; Böck, Josef
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
This work describes a monolithic integrated active frequency doubler for frequencies up to 42 GHz in a pre-production 0.4 μm SiGe bipolar technology. Gain is achieved at the input power of -12 dBm between 18 and 42 GHz with maximum of 8.6 dB at 30 GHz. The circuit may be used for future broadband wireless services like LMDS at 28 and 38 GHz or MVDS at 42 GHz.
Keywords :
Ge-Si alloys; bipolar MIMIC; frequency multipliers; millimetre wave frequency convertors; semiconductor materials; 0.4 micron; 18 to 42 GHz; 8.6 dB; LMDS; MVDS; SiGe; SiGe bipolar technology; broadband wireless service; monolithic integrated active frequency doubler; Bonding; Circuits; Frequency; Germanium silicon alloys; Inductors; Manufacturing; Parasitic capacitance; Power generation; Silicon germanium; Wiring;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187633
