Title :
A harmonic-balance-oriented modeling approach for microwave electron devices
Author :
Filicori, F. ; Monaco, V.A. ; Vannini, G.
Author_Institution :
Dipartimento di Elettronica, Inf. e Sistematica, Bologna Univ., Italy
Abstract :
A technology-independent model of microwave electron devices, the Nonlinear Integral Model, is proposed. This model is rigorously derived from the Volterra series under mild assumptions valid for most types of electron devices and is particularly suitable for circuit analysis based on harmonic-balance techniques. Moreover, it makes it possible to compute the large-signal response of an electron device directly in terms of data obtained by physics-based numerical simulations. The validity of the model is confirmed both by simulation and by experimental results.<>
Keywords :
Schottky gate field effect transistors; digital simulation; nonlinear network analysis; semiconductor device models; solid-state microwave devices; MESFET; Nonlinear Integral Model; Volterra series; experimental results; harmonic-balance-oriented modeling approach; large-signal response; microwave electron devices; model validation; physics-based numerical simulations; simulation results; technology-independent model; Circuit analysis; Circuit simulation; Computational modeling; Electron devices; Equivalent circuits; Microwave devices; Microwave theory and techniques; Numerical models; Numerical simulation; Physics computing;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235382
