Title :
An improved analytical LDD-MOSFET model for digital and analog circuit simulation for all channel lengths down to deep-submicron
Author_Institution :
Siemens AG, Munchen, Germany
Abstract :
An improved analytical LDD (lightly doped drain)-MOSFET model for digital and analog circuit simulation in the deep-submicron region is described. This model includes all short and narrow channel effects and a substrate current model. Special emphasis was placed on the voltage-dependent effective channel length and series resistance of LDD devices. The voltage-dependent channel length and series resistance of LDD devices are measured electrically, verified with capacitance measurements, and introduced into the model.<>
Keywords :
insulated gate field effect transistors; semiconductor device models; LDD-MOSFET model; analog circuit simulation; analytical model; capacitance measurements; deep submicron channel lengths; deep-submicron region; digital circuit model; lightly doped drain; narrow channel effects; short channel effects; substrate current model; voltage dependent series resistance; voltage-dependent channel length; voltage-dependent effective channel length; Analog circuits; Analytical models; Capacitance measurement; Circuit simulation; Electric resistance; Electric variables measurement; Electrical resistance measurement; Length measurement; MOSFET circuits; Voltage;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235385
