Title :
p-n blue light emitting diodes using p-ZnTe/ZnS doping superlattices
Author :
Yokogawa, T. ; Narusawa, T.
Author_Institution :
Matsushita Electric Ind. Co. Ltd., Osaka, Japan
Abstract :
The authors demonstrated p-n junction blue LEDs (light emitting diodes) using p-ZnTe/ZnS doping SLs (superlattices). These LED structures emit blue light at room temperature. These heterostructures provide p-type conduction and a sheet hole concentration of 5*10/sup 12/ cm/sup -2/, which corresponds to the average concentration of about 1*10/sup 17/ cm/sup -3/. It is believed that the present study is a promising first step towards blue LDs using II-VI semiconductors.<>
Keywords :
II-VI semiconductors; light emitting diodes; p-n junctions; semiconductor superlattices; zinc compounds; II-VI semiconductors; ZnTe-ZnS; blue LEDs; heterostructures; light emitting diodes; p-n junction; p-type conduction; room temperature; sheet hole concentration; Breakdown voltage; Doping; Gold; Laser sintering; Light emitting diodes; Semiconductor diodes; Substrates; Superlattices; Temperature measurement; Zinc compounds;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235392
