Title :
Characteristics of 680 nm-visible laser diode with MQB grown by MOCVD
Author :
Motoda, T. ; Kadoiwa, K. ; Kimura, T. ; Nishimura, T. ; Uesugi, F. ; Kamizato, T. ; Arimoto, S. ; Tsugami, M. ; Mizuguchi, K.
Author_Institution :
Mitsubishi Electric Corp., Hyogo, Japan
Abstract :
The authors introduced MQB (multiquantum barrier) structure grown by metal-organic chemical vapor deposition in an AlGaInP visible laser and improved the laser characteristics. The threshold current at 70 degrees C is reduced from 70 mA to 56 mA, and the characteristic temperature in the range over 70 degrees C is improved from 52 K to 69 K. This improvement is due to the suppression of carrier overflow by the MQB structure. This is a kind of electron wave interference device working at room temperature.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor growth; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; 680 nm; 70 C; 70 to 56 mA; AlGaInP; MQB structure; carrier overflow suppression; characteristic temperature; electron wave interference device; laser characteristics; metal-organic chemical vapor deposition; multiquantum barrier; room temperature; semiconductors; threshold current; visible laser; Controllability; Diode lasers; Electrons; Interference; Light scattering; MOCVD; Masers; Optical scattering; Temperature; Threshold current;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235393
