Charge-storage-type optoelectronic sensor with DOG-function characteristics

Author

Matsui, Yu-Ichi ; Miyoshi, Yoshio

Author_Institution

Collaborative Res. Center, Univ. of Shiga Prefecture

fYear

2005

fDate

Oct. 30 2005-Nov. 3 2005

Abstract

The optoelectronic sensors with DOG (difference of Gaussian)-function characteristics have been developed successfully for the application to the artificial visual cortex. The remarkable negative photoinduced current (PIC) and negative differential (ND) characteristics according to the forward bias voltage have been obtained for GaAs/GaAlAs multi-quantum well (MQW) structures with a charge-storage layer of InAs/GaAs short period superlattice (SSL). The characteristics are dependent on the crystal quality of the charge-storage layer and extremely enhanced by using the InAs/GaAs SSL compared with InGaAs alloy. In addition, we have designed an optoelectronic sensing circuit to mimic the mechanism of the selectivity to orientation, motion-direction and length of slit light in a human visual cortex

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optoelectronic devices; quantum wells; sensors; superlattices; vision; GaAs-GaAlAs; InAs-GaAs; difference of Gaussian-function characteristics; human visual cortex; multiquantum well structures; negative differential; optoelectronic sensors; photoinduced current; short period superlattice; Circuits; Gallium arsenide; Gaussian processes; Indium gallium arsenide; Neodymium; Optoelectronic and photonic sensors; Quantum well devices; Sensor phenomena and characterization; Superlattices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2005 IEEE

Conference_Location

Irvine, CA

Print_ISBN

0-7803-9056-3

Type

conf

DOI

10.1109/ICSENS.2005.1597839

Filename

1597839