• DocumentCode
    3304601
  • Title

    High performance properties of sintered Bi2Te3-based thermoelectric material

  • Author

    Sugihara, S. ; Tomita, S. ; Asakawa, K. ; Suda, H.

  • Author_Institution
    Dept. of Mater. Sci. & Ceramic Technol., Shonan Inst. of Technol., Fujisawa, Japan
  • fYear
    1996
  • fDate
    26-29 March 1996
  • Firstpage
    46
  • Lastpage
    51
  • Abstract
    Bi/sub 2/Te/sub 3/-based thermoelectric materials have been studied for fabrication parameters and orientation effects. The powder particle sizes were less than 150 /spl mu/m and the mixtured grain sizes after sintering were observed in scanning electron microscope. As the results, electrical resistivity was 40% lower by reducing powders before pressing, and cold isostatic press took away the layer structures formed with pressing. The direction to the pressing and the measurements indicated lower resistivities (30-60%) for both p- and nBi/sub 2/Te/sub 3/, then Z values were 2.05 and 2.23 K/sup -1/ for those types, respectively. It should be notified that the composites of large and small grains will mitigate an enhancement of electrical resistivity and reduce thermal conductivity in a sintered specimen.
  • Keywords
    bismuth compounds; electrical resistivity; grain size; materials preparation; particle size; semiconductor materials; sintering; thermal conductivity; thermoelectricity; 150 mum; Bi/sub 2/Te/sub 3/; cold isostatic press; electrical resistivity; fabrication parameters; grain sizes; orientation effects; powder particle sizes; scanning electron microscope; sintered Bi/sub 2/Te/sub 3/-based thermoelectric material; thermal conductivity; Bismuth; Electric resistance; Electrons; Fabrication; Grain size; Powders; Pressing; Tellurium; Thermal conductivity; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1996., Fifteenth International Conference on
  • Conference_Location
    Pasadena, CA, USA
  • Print_ISBN
    0-7803-3221-0
  • Type

    conf

  • DOI
    10.1109/ICT.1996.553254
  • Filename
    553254